? fuji electric co., ltd. abstract 50 1. introduction in recent years, initiatives to reduce co 2 emissions in order to protect the environment have been imple- mented in countries throughout the world. the shift to clean energy, such as to wind power and solar power, which does not rely on conventional fossil fuels, is be- coming increasingly prominent. the use of power electronics devices to conserve energy can be found in a wide variety of applications, from consumer electronics to electric railways, fa sys- tems and the like. moreover, power electronics are used not only in power-consuming applications, but their use has also spread to the elds of power gen- eration, transmission and supply such as in uninter- ruptible power supplies (ups), wind power generators and solar power generators. in particular, multi-level inverters have been proposed as an ef cient way to increase the power conversion ef ciency of a ups or power generation system (1) , and neutral-point-clamped (npc) inverters have been put into practical use. a 3-level inverter* 1 having a simpler circuit con guration than this npc inverter has also been proposed, but when con gured with typical insulated gate bipolar transistor (igbt) and diode, an increase in conduction loss and a high surge voltage due to the wiring induc- tance were problems. fuji electric has developed circuit systems for in- verters and converters, which are power electronics devices, and has contributed to energy conservation mainly in devices in the industrial eld. additionally, by adopting a custom low inductance package using kosuke komatsu ? takahito harada ? yoshiyuki kusunoki ? igbt module series for advanced-npc circuits a series of insulated gate bipolar transistor (igbt) modules has been developed to enable advanced neutral- point-clamped (a-npc) inverters. modules in this series integrate a-npc circuits for three phases with thermistors in a single package. loss is minimized by the adoption of 6th-generation igbt, free wheeling diode (fwd) and reverse blocking igbt (rb-igbt) devices. power dissipation is reduced by 51% compared to conventional two-level invert- ers and by 33% compared to conventional npc three-level inverters. two types of pin con guration are available, and selectable according to customer requirements. a reverse-blocking igbt (2) (rb-igbt), a proprietarily developed power semiconductor, fuji electric has de- veloped an igbt module for use in advanced npc (a-npc) circuits that solves the aforementioned prob- lems (3) . a ups that utilizes this module has been in- troduced to the market. presently, fuji electric is aiming to expand its series of igbt module for a-npc circuits, and is de- veloping an igbt module for a-npc circuits that in- tegrates a three-phase a-npc 3-level inverter circuit and a thermistor into a single package. this paper presents an overview of these efforts. 2. characteristics of igbt modules for advanced npc circuits 2.1 overview an overview of the ratings, dimensions and the like of fuji electric?s igbt module series for a-npc circuits is shown in table 1 . the rated voltage of the main switches is 1,200 v, the rated voltage of the inter- mediate bidirectional switches is 600 v, and the rated current is 100 a. the modules have the following char- acteristics. (a) integration of a 3-phase a-npc circuit and a thermistor into a single package (b) selectable pin shape according to the inverter production line figure 1 (a) shows the appearance and fig. 1 (b) shows the equivalent circuit of the igbt modules. 2.2 electrical characteristics of the device (1) main switches for the main switches t1 and t2 (see table 2 ), the new ?v series? igbt and free wheeling diode (fwd) having a rated voltage of 1,200 v were used. the v series has the following characteristics. * 1: 3-level inverter technology; see supplemental explana- tion 1 on page 87. http://www..net/ datasheet pdf - http://www..net/
51 igbt module series for advanced-npc circuits issue: power semiconductor contributing in energy and environment region (a) lower on-state voltage v ce (sat) and less switch- ing loss due to optimized eld stop (fs) and trench gate structures (b) improved controllability of turn-on d i /d t with gate resistance r g (2) bidirectional switches for the bidirectional switches t3 and t4 (see table 2 ), rb-igbts having a rated voltage of 600 v were used. the rb-igbt characteristics are as follows. (a) rb-igbt has reverse blocking voltage capabil- ity, and can therefore be connected in a anti parallel con guration to enable bidirectional switching. (b) when a forward gate bias voltage is applied to cause the chip to exhibit reverse recovery switching as a fwd, the reverse recovery char- acteristics are the same as that of a convention- al fwd. (3) conduction loss an a-npc inverter circuit, as compared to a con- ventional npc inverter circuit, has half the number of conducting elements throughout its entire current path. as a result, conduction loss can be reduced by approximately 30% compared to a conventional npc inverter. table 2 compares the current paths and on- state voltages of the conventional npc inverter and the a-npc inverter. (4) switching loss an igbt module for use in a-npc circuit differs from a conventional igbt module in that it has the fol- lowing three switching paths as shown in fig. 2 . (a) path in which the main igbts operate as switches and the main fwds operate in reverse recovery (mode a) (b) path in which the rb-igbts switch and the main fwds operate in reverse recovery (mode b) table 1 overview of igbt modules for a-npc circuits model package dimensions rated voltage rated current 12MBI100VN-120-50 (solder pin type) l122.5w62.5h17 (mm) 1,200 v (m10aain switch part) 600 v (bidirectional switch part) 100 a (main switch part) 100 a (bidirectional switch part) 12mbi100vx-120-50 (press- t pin type) fig.1 appearance and equivalent circuit of igbt module for a-npc circuits p u v w t1gu t3gu t3eu t4gu t3gv t3ev t4gv t3gw t3ew t4gw t1gv t1gw t1/t4eu t1/t4ev t1/t4ew t2gu t2gv t2gw t2eu t2ev t2ew th1 th2 m n (a) appearance (b) equivalent circuit press-fit pin type solder pin type fig.2 example of current paths in each switching mode mode a mode c mode b table 2 npc inverter and a-npc inverter on-state voltage comparison m n t2 t4 t1 u t3 mode 4 mode 3 mode 4 mode 3 mode 1 mode 2 mode 1 mode 2 d1 d2 p m n t2 t3 t4 t1 u npc inverter a-npc inverter i c =100 a
v ge = 15 v
t j =25 c mode 1 3.20 v 1.85 v mode 2 current path 3.20 v 1.85 v mode 3 3.20 v 2.45 v mode 4 3.20 v 2.45 v p (a) npc inverter (b) a-npc inverter http://www..net/ datasheet pdf - http://www..net/
52 vol. 58 no. 2 fuji electric review (c) path in which the main igbts switch and the rb-igbts operate in reverse recovery (mode c) for the 3-level inverter operation, basic operation is in mode b and mode c. figure 3 shows the turn-on, turn-off and reverse recovery waveforms in mode b for a module at v cc = 300 v, i c = 100 a, r g =24 and t j = 125 c. the switching loss is 3.0 mj at turn-on, 4.1 mj at turn-off, and 1.67 mj at reverse recovery, and no turn- off surge that exceeded the rated voltage was found. figure 4 shows the current dependence of the switching loss, and fig. 5 shows the gate resistance dependence of the switching loss. as described above, the reverse-recovery loss characteristics when the rb- igbt is in reverse-recovery mode c are no different from when a conventional fwd is in reverse-recovery mode b. 2.3 package a conventional compact package (econopim?* 2 3/ * 2: econopim tm is a trademark or registered trademark of in neon technologies ag. fig.4 current dependence of switching loss switching loss (mj) 50 100 150 200 250 0 5 10 15 0 (a) mode b switching loss (mj) 50 100 150 200 250 0 5 10 15 0 current i c , i f (a) (b) mode c current i c , i f (a) v cc =300 v, v ge = 15 v, r g =24 , t j = 125 c v cc =300 v, v ge = 15 v, r g =1.6 , t j = 125 c e on e on e off e off e rr e rr fig.5 gate resistance dependence of switching loss switching loss (mj) 10 100 1,000 1 10 5 20 15 25 0 switching loss (mj) 110100 0.1 5 10 0 (a) mode b gate resistance rg ( ) (b) mode c gate resistance rg ( ) v cc = 300 v, v ge = 15 v, i c , i f = 100 a, t j = 125 c v cc = 300 v, v ge = 15 v, i c , i f = 100 a, t j = 125 c e on e on e off e off e rr e rr fig.6 main terminal arrangement u p m n vw fig.3 switching waveform (mode b) (a) turn-on waveform 0v 0v 0a 0v 0a 0v 0v 0a v ge : 10 v/div v ge : 10 v/div i c : 50 a/div i c : 50 a/div v ce : 100 v/div v ce : 100 v/div v ak : 100 v/div i f : 50 a/div t : 200 ns/div t : 200 ns/div t : 200 ns/div (b) turn-off waveform (c) reverse recovery waveform http://www..net/ datasheet pdf - http://www..net/
53 igbt module series for advanced-npc circuits issue: power semiconductor contributing in energy and environment region conduction loss accounts for a higher percentage of to- tal power dissipation. with an a-npc 3-level inverter, because an rb- igbt has larger conduction loss than an ordinary igbt, the conduction loss is 8.7% larger than that of a 2-level inverter, but can be reduced to about 37% less than an npc 3-level inverter. on the other hand, the switching loss is smaller as in the case of the npc 3-level inverter. as a result, in contrast to the loss in the npc 3-level inverter, the percentages of conduction loss and switching loss become equal, and even if the carrier frequency changes, the power dissipation never exceeds that of the npc 3-level inverter. figure 9 shows the carrier frequency dependence of power dissipation. in the region of carrier frequencies of 5 khz or higher, the power dissipation is less for a 3-level inverter than a 2-level inverter. in the region of carrier frequencies lower than 5 khz, the 2-level in- verter appears to have less power dissipation, but the noise lter attached to the inverter apparatus is larger for the 2-level inverter than a 3-level inverter, and as a result, the total loss (power dissipation including xed loss and lter loss) generated by the entire inverter ap- paratus, the 3-level inverter has less power dissipation. pc-pack3) was selected for the newly developed igbt module for a-npc circuits. as a result, the package has the following characteristics. (a) main terminals p, m, n layout allows for easy placement of snubber capacitors (between p-m, between m-n) to reduce surge voltage (see fig. 6 ) (b) terminal shape 2 types of terminal shapes (solder pin, press- t pin) can be selected according to customer needs (see fig. 7 ) (c) environmentally friendly lead-free and compliant with rohs directive* 3 3. power dissipation figure 8 compares the power dissipation per phase of a conventional 2-level inverter, an npc 3-level in- verter and an a-npc 3-level inverter when operating under the same conditions. the power dissipation was computed with the v series ratings of 100 a / 1,200 v (econopim? 3) for the conventional 2-level inverter and using the v series ratings of 100 a / 600 v (econopim? 3) for the npc 3-level inverter. operating conditions for the 20 kva inverter were f c = 7 khz, dc voltage = 700 v, and output current = 30 a (rms). as a result, the a-npc 3-level in- verter exhibited the least power dissipation, 51% less than the conventional 2-level inverter and 33% less than the npc 3-level inverter. viewed individually, these inverters have the following characteristics. the 2-level inverter has the smallest conduction loss since it has only one device that conducts current. however, because the dc voltage is twice that of a 3-level inverter, switching loss accounts for 76.6% of the total power dissipation. the npc 3-level inverter has the largest conduc- tion loss since there are two conducting devices in each current ow path. with three levels, however, the dc voltage is halved and the switching loss is less than half that of a 2-level inverter. consequently, the con- duction loss accounts for 54.8% of the power dissipa- tion per phase. as the carrier frequency decreases, * 3: rohs directive: european union (eu) directive on re- striction of the use of certain hazardous substances in electrical and electronic equipment fig.7 terminal shape (b) press-fit pin (a) solder pin fig.8 comparison of power dissipation for various inverters 20 kva inverter f c =7 khz, v dc = 700 v, i o (rms value) = 30 a 0 60 80 20 40 100 140 120 power dissipation per phase (w) 160 2-level inverter 147.3 112.9 (76.6%) 34.4 (23.4%) npc 3-level inverter 108.1 48.9 (45.2%) 59.2 (54.8%) a-npc 3-level inverter 72.3 34.9 (48.2%) 37.5 (51.8%) switching loss conduction loss fig.9 carrier frequency dependence of power dissipation power dissipation per phase (w) 10 5152030 25 0 50 150 100 400 350 400 200 250 0 carrier frequency f c (khz) 2-level inverter npc 3-level inverter a-npc 3-level inverter http://www..net/ datasheet pdf - http://www..net/
54 vol. 58 no. 2 fuji electric review references (1) nabae, a. et al. ?a new neutral-point-clamped pwm inverter,? ieee trans. on i. a., 1981, vol.ia-17, no.5, p.518-523. (2) takei, m. et al. ?the reverse blocking igbt for matrix converter with ultra-thin wafer technology,? proc. of ispsd ?03, 2003, p.156-159. (3) komatsu, k. et al. ?new igbt modules for advanced neutral-point-clamped 3-level power converters,? proc. of ipec ?10, 2010, p.523-527. 4. postscript this paper has presented an overview and de- scribed characteristics of fuji electric?s igbt module series for advanced-npc circuits. this product sup- ports applications of several tens of kva, and will sure- ly satisfy customer requests for high ef ciency, small size and ease of use. in the future, fuji electric will expand the product lineup of this igbt module series for advanced-npc circuits, and intends to develop modules in response to requests for higher ef ciency in upss and the like. http://www..net/ datasheet pdf - http://www..net/
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